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TranslationMobile

電子注入
電子注射

"electron" in Chinese : n. 【物理學(xué)】電子。 the electron bea ...
"injection" in Chinese : n. 1.注射。 2.注射劑，注射液，針?biāo)?，灌腸(藥)。 ...
"electron-injection" in Chinese : 電子注入
"ballistic electron injection" in Chinese : 彈道電子注入
"electron injection in a semiconductor" in Chinese : 電子注入
"hot electron injection" in Chinese : 熱電子注入
"hot-electron injection" in Chinese : 熱電子噴注
"injection hot electron" in Chinese : 熱電子噴注
"magnetic control injection electron gun" in Chinese : 磁控注入式電子槍
"electron" in Chinese : n. 【物理學(xué)】電子。 the electron beam 電子束。 the ...
"s electron" in Chinese : s電子
"injection" in Chinese : n. 1.注射。 2.注射劑，注射液，針?biāo)?，灌腸(藥)。 3.充滿，注滿。 ...
"with injection" in Chinese : 附面層吹除裝置工作時
"electron current; electron flow" in Chinese : 電子流
"electron-electron bremsstrahlung" in Chinese : 電子電子韌致輻射

Examples

The positive charge assisted tunneling current can be greatly reduced by using appropriate substrate hot electron injection technique
利用襯底熱電子注入技術(shù)，正電荷輔助隧穿電流可被大大的減弱。
The first step is the creation of trap centers in ultra - thin gate oxides by hot electron injection , and the second step is oxides breakdown induced by hole trapping
首先注入的熱電子在超薄柵氧化層中產(chǎn)生陷阱中心，然后空穴陷入陷阱導(dǎo)致超薄柵氧擊穿。
The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the fn tunneling can be explained in terms of the average electron energy in the oxide
通過計算注入到氧化層中的電子能量和硅襯底的電場的關(guān)系表明，熱電子注入和fn隧穿的不同可以用氧化層中電子的平均能量來解釋。
The other has two metal - insulator - semiconductor ( ms ) contacts with lower leakage current ( less than 4 pa , 300v ) and better energy resolution ( about 10 % fwhm for 241am 59 . 5kev line ) and poor working stability . in theoretical studies , the analysis on the phase equilibrium in the vapor growth of cdse single crystals shows that the stoichiometry of cdse crystals can be controlled effectively by controlling the stoichiometry of starting materials and the vapor growth temperature . besides , the investigation of the transporting properties of charge carries in cdse detectors indicates that the noise in energy spectrum detected by using the detectors with msm structure is caused by the hole injection , which is induced by electron injection and the light injection
本文把cdse單晶體的生長、單晶體的成分、單晶體的性能以及單晶體在室溫核輻射探測器中表現(xiàn)出來的性能結(jié)合起來進行了比較系統(tǒng)的研究；采用垂直無籽晶氣相提拉法生長出了電阻率為10 cm量級、尺寸為中10mm 30mm的單晶體；制備出了能量分辨率達10 ( fwhm ) (對~ ( 241 ) am59 . 5kev譜線而言)的cdse室溫核輻射探測器，取得了較好的研究結(jié)果。